Dr. Jongsun Kim received his Ph.D. in Electrical Engineering from the University of California, Los Angeles (UCLA) in 2006, specializing in Integrated Circuits and Systems. He continued his research as a Postdoctoral Fellow at UCLA from 2006 to 2007.

From 1994 to 2008, Dr. Kim worked at Samsung Electronics as a member of the DRAM Design Team, where he contributed to the development of various memory technologies, including DDR2/DDR3/DDR4 Synchronous DRAMs, SGDRAMs, and Rambus DRAMs.

Since March 2008, he has been with the School of Electronic & Electrical Engineering at Hongik University. His research interests include high-performance mixed-signal (analog and digital) circuit and system design.? 

Professional Experience